| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| IRF230 IRF230-QR-B |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
|
SEMELAB LTD
Seme LAB
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
| AUIRS2332JTR |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
|
International Rectifier
|
| FS50UM-06 |
Bench Power Supply; Output Voltage:13.8VDC; Output Current:12A; Output Power Max:400W; Number of Outputs:1; Calibrated:No; Features:Constant voltage, reverse polarity, thermal & short-circuit protection
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| GFCG50 |
N Channel high voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT803 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
|
